BLF3G21 NXP Semiconductors, BLF3G21 Datasheet

BLF3G21

Manufacturer Part Number
BLF3G21
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF3G21

Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4.5A
Drain Source Voltage (max)
65V
Output Power (max)
36W
Power Gain (typ)@vds
13.5@26V/12.5@26V/16@26VdB
Frequency (max)
2.2GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
3S
Drain Source Resistance (max)
300(Typ)mohm
Reverse Capacitance (typ)
1.7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
43%
Mounting
Screw
Mode Of Operation
1-Tone CW/2-Tone CW/PHS
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF3G21-30
Manufacturer:
SANYO
Quantity:
30 000
Part Number:
BLF3G21-6
Manufacturer:
HITTITE
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features
30 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz.
Table 1.
I
Table 2.
I
I
I
I
I
I
I
I
Mode of operation
CW
Two-tone
Mode of operation
PHS
Dq
Dq
BLF3G21-30
UHF power LDMOS transistor
Rev. 01 — 14 February 2007
= 450 mA; T
= 1 A; T
Excellent back-off linearity
Typical PHS performance at a supply voltage of 26 V and I
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 9 W
Gain = 16 dB (typ)
Efficiency = 20 %
ACPR
h
Typical class-AB RF performance
Typical class-A RF performance
= 25 C in a modified PHS test fixture.
600
h
= 25 C in a common source test circuit.
= 75 dBc
f
(MHz)
2000
2000
f
(MHz)
1880 to 1920
P
(W)
36
30
0.1 to 10
L
P
(W)
9
L(AV)
G
(dB)
12.5
13.5
13.8
Dq
p
G
(dB)
16
of 1 A:
p
Product data sheet
(%)
43
35
-
D
(%)
20
D
IMD3
(dB)
-
< 50 -
26
ACPR
(dBc)
75
P
(W)
36
-
L(1dB)
600

Related parts for BLF3G21

BLF3G21 Summary of contents

Page 1

... BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 450 mA Mode of operation CW Two-tone Table Mode of operation PHS CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Simplified outline Symbol 1 [ Min Max - 4.5 ...

Page 3

... Application information = 25 C unless otherwise specified. h Parameter power gain input return loss drain efficiency third order intermodulation distortion power gain drain efficiency Dq power gain drain efficiency Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Conditions L(AV L(AV) Min = 0.7 mA ...

Page 4

... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF3G21-30 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2200 MHz at rated load power (dB 450 mA Fig 1. Power gain as function of CW load power; typical values (dB 450 mA 2000 MHz 2000.1 MHz ...

Page 5

... Product data sheet 001aaf794 (pF) (3) (7) (5) 0.5 1.0 f (MHz Fig 6. C 001aaf796 2.1 2.2 f (GHz Fig 8. Load impedance as function of frequency Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor oss C C iss 10 C rss and C as functions of drain supply iss rss oss voltage ...

Page 6

input Fig 9. Class-AB test circuit for 2 GHz R1 C11 C12 V gate C6 C5 L12 C10 L10 C9 L14 L11 L15 L13 ...

Page 7

... The other side is unetched and serves as a ground plane. See Table 9 for a list of components. Fig 10. Component layout for 2 GHz class-AB test circuit BLF3G21-30_1 Product data sheet 50 mm PH98072 IN C16 PH98072 IN Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor PH98073 OUT C15 C13 C14 C11 F1 C12 R2 C10 C9 ...

Page 8

... W Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Dimensions Catalogue No. 2222 581 16641 2222 037 58101 8DS3/3/8/9-4S2 4330 030 36301 1.9 mm 7 ...

Page 9

... REFERENCES JEDEC EIAJ Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor 2.21 20.45 5.97 14.27 0.25 0.51 1.96 20 ...

Page 10

... Personal HandyPhone System Radio Frequency Surface-Mount Device Ultra High Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...

Page 11

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 14 February 2007 BLF3G21-30 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 February 2007 Document identifier: BLF3G21-30_1 ...

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