BF1101WRT NXP Semiconductors, BF1101WRT Datasheet - Page 11

BF1101WRT

Manufacturer Part Number
BF1101WRT
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1101WRT

Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.03A
Drain Source Voltage (max)
7V
Noise Figure (max)
2.5dB
Frequency (max)
1GHz
Package Type
CMPAK
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@5V@Gate 1/1.6@5V@Gate 2pF
Output Capacitance (typ)@vds
1.2@5VpF
Reverse Capacitance (typ)
0.025@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
1999 May 14
Plastic surface-mounted package; reverse pinning; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
A
max
A 1
0.1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
1.4
1.2
E
4
1
1.9
w
SC-61AA
e
B
JEITA
scale
M
11
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1101; BF1101R; BF1101WR
A
0.55
0.25
L p
A 1
0.45
0.25
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
L p
Q
0.1
Product specification
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143R
X

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