STP11N52K3 STMicroelectronics, STP11N52K3 Datasheet

STP11N52K3

Manufacturer Part Number

STP11N52K3

Description

MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w

Manufacturer

STMicroelectronics

Datasheets

1.STP11N52K3.pdf (19 pages)

2.STP11N52K3.pdf (20 pages)

Specifications of STP11N52K3

Lead Free Status / Rohs Status

Details

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BOSTOCK HK LIMITED

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Features

■

Application

Switching applications

Description

These devices are N-channel Power MOSFETs

made using the SuperMESH3™ technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting transistor has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.

Table 1.

May 2011

STB11N52K3

STP11N52K3

STF11N52K3

Order codes

100% avalanche tested

Extremely high dv/dt capability

Gate charge minimized

Very low intrinsic capacitance

Improved diode reverse recovery

characteristics

Zener-protected

N-channel 525 V, 0.41 Ω , 10 A SuperMESH3™ Power MOSFET

STB11N52K3

STF11N52K3

STP11N52K3

Order codes

Device summary

525 V

DSS

< 0.51 Ω

max.

DS(on)

11N52K3

Marking

10 A

Doc ID 018868 Rev 1

125 W

30 W

STB11N52K3, STF11N52K3

Figure 1.

TO-220

Packages

TO-220FP

TO-220

D²PAK

D²PAK,TO-220FP, TO-220

G(1)

Internal schematic diagram

D²PAK

STP11N52K3

D(2)

S(3)

Tape and reel

Packaging

Tube

TO-220FP

www.st.com

AM01476v1

1/19

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