MRFE6VP8600HR6 Freescale Semiconductor, MRFE6VP8600HR6 Datasheet
MRFE6VP8600HR6
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MRFE6VP8600HR6 Summary of contents
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... T 150 ° 1052 W D 5.26 W/°C T 225 °C J MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Document Number: MRFE6VP8600H Rev. 1, 9/2011 MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 470- -860 MHz, 600 LDMOS BROADBAND RF POWER TRANSISTORS CASE 375D- -05, STYLE 1 NI- -1230 MRFE6VP8600HR6 CASE 375E- -04, STYLE 1 NI- -1230S ...
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... Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact resistance of this TIM. 4. Each side of device measured separately. 5. Measurement made with device in push--pull configuration. 6. Part internally input matched. 7. Die capacitance value without internal matching. MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 2 = 25°C unless otherwise noted) A Symbol I ...
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... Load Mismatch VSWR >65:1 at all Phase Angles Overdrive from Rated P (240 W Avg.) out RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) A Symbol PAR Ψ MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Min Typ Max Unit = 50 Vdc 1400 mA 860 MHz — 7.8 — dB ...
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... C10 *C8, C14, C15, C16, C17, C18 and C23 are mounted vertically. Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB- -T (8k OFDM) Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB- -T (8k OFDM) Part C1 μ Chip Capacitors C2, C10 2.2 μ ...
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... Microstrip Z11, Z12 0.022″ x 0.400″ Microstrip Z13, Z14 0.208″ x 0.850″ Microstrip Z15, Z16 0.242″ x 0.960″ Microstrip Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB- -T (8k OFDM) RF Device Data Freescale Semiconductor V BIAS C1 C2 ...
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... C Figure 4. Normalized V GS Case Temperature 1000 Measured with ±30 mV(rms) MHz Vdc GS 100 DRAIN--SOURCE VOLTAGE (VOLTS) DS Note: Each side of device measured separately. Figure 6. Capacitance versus Drain- -Source Voltage MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Vdc 100 2.1 2.2 Note: Measured with both sides of the transistor tied together. ...
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... Vdc 1400 100 120 140 160 P , OUTPUT POWER (WATTS) AVG. out MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 7.61 MHz 4 kHz BW 4 kHz BW ACPR Measured at 4 MHz Offset from Center Frequency DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols --4 --3 --2 -- FREQUENCY (MHz) Figure 10. DVB- -T (8k OFDM) Spectrum ...
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... Figure 12. MTTF versus Junction Temperature - - Input Matching Network Figure 13. Series Equivalent Source and Load Impedance MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 8 TYPICAL CHARACTERISTICS Vdc 125 W CW out 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J Note: The MTTF calculation for this graph is based on the thermal resistance of the part using thermal grease TIM mounting ...
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... L2 C13 C14 *C9, C11, C12, C21, C22, C23, C24, C25, C26, C27, C28, C29, C30 and C33 are mounted vertically. Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470- -860 MHz RF Device Data Freescale Semiconductor 470- -860 MHz REFERENCE CIRCUIT = 1400 mA, Channel Bandwidth = 8 MHz, Input ...
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... Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470- -860 MHz Part C1, C13 10 μ Chip Capacitors C2, C14 2.2 μ Chip Capacitors C3, C15 10 pF Chip Capacitors C4 Chip Capacitors C6 Chip Capacitors C8, C10 0.8--8.0 pF Variable Capacitors C9, C28 8.2 pF Chip Capacitors C11, C12 6 ...
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... C7 Z4 COAX2 Z58 C20 Z56 Z27 Z29 Z31 Q1 C23 Z28 Z30 Z32 Z57 C36 Z59 Figure 15. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Schematic — 470- -860 MHz RF Device Data Freescale Semiconductor 470- -860 MHz REFERENCE CIRCUIT L1 V BIAS Z11 Z13 Z15 C8 C9 C10 ...
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... Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 18. DVB- -T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power — 470- -860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Vdc 1400 860 MHz 665 MHz ...
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... DQ η 35°C C 75°C (1) IMD 35°C 500 550 600 650 700 750 800 f, FREQUENCY (MHz) delta marker at 4.2 MHz offset from center frequency. MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 5 665 MHz 0 860 MHz --5 --10 --15 860 MHz --20 (1) IMD --25 --30 200 0 -- 35°C C ...
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... Z source Input Matching Network Figure 22. Broadband Series Equivalent Source and Load Impedance — 470- -860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 14 470- -860 MHz REFERENCE CIRCUIT f = 860 MHz f = 470 MHz Z load f = 860 MHz f = 470 MHz Vdc 1400 mA 125 W Avg out source load MHz Ω ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 15 ...
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... MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 17 ...
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... MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 18 RF Device Data Freescale Semiconductor ...
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... Sept. 2011 • Added Fig. 19, DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power -- 470--860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems Device Data Freescale Semiconductor REVISION HISTORY Description MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 19 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Document Number: MRFE6VP8600H Rev. 1, 9/2011 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...