MRFE6VP8600HR6 Freescale Semiconductor, MRFE6VP8600HR6 Datasheet - Page 13

• Manufacturer Part Number: MRFE6VP8600HR6
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP8600HR6

• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 470- -860 MHz REFERENCE CIRCUIT
Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency
Figure 19. DVB- -T (8k OFDM) Drain Efficiency, Power Gain and
Figure 20. Broadband Power Gain and IRL versus Frequency
40
35
30
25
20
15
10
22
21
20
19
18
17
16
15
14
13
12
37
35
33
31
29
27
25
23
21
19
11
10
17
(1) Intermodulation distortion shoulder measurement made using
5
IMD Shoulder versus Output Power — 470- -860 MHz
450
450
0
(1) Intermodulation distortion shoulder measurement made using
V
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
delta marker at 4.2 MHz offset from center frequency.
V
DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols
--
DD
DD
delta marker at 4.2 MHz offset from center frequency.
IMD
500
= 50 Vdc, I
500
= 50 Vdc, P
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
η
IRL
(1)
G
V
I
64 QAM Data Carrier Modulation, 5 Symbols
DQ
D
ps
DD
40
550
= 1400 mA, DVB--T (8k OFDM)
550
P
= 50 Vdc, P
out
DQ
, OUTPUT POWER (WATTS) AVG.
out
470 MHz
= 700 mA
600
= 125 W Avg., I
600
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
out
80
= 125 W Avg.
650
650
665 MHz
G
DQ
700
700
ps
= 1400 mA
120
470 MHz
750
750
T
665 MHz
C
η
75°C
= 35°C
35°C
D
800
800
860 MHz
470 MHz
160
75°C
860 MHz
T
665 MHz
75°C
C
IMD
850
860 MHz
= 35°C
850
75°C
(1)
50°C
50°C
50°C
50°C
35°C
200
900
900
5
0
--5
--10
--15
--20
--25
--30
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--11
--12
--15
--17
--19
--21
--23
--25
--27
--29
--31
--33
--35
13