MJD122-1 STMicroelectronics, MJD122-1 Datasheet
MJD122-1
Manufacturer Part Number
MJD122-1
Description
Manufacturer
STMicroelectronics
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Table 1.
Features
Applications
Description
The device is manufactured using Epitaxial-base
technology for high performance.
PNP type is MJD127.
October 2007
Order code
MJD122T4
Low base drive requirements
Integrated antiparallel collector-emitter diode
Through hole TO-251 (IPAK) power package in
tube (suffix “-1”)
Surface mounting TO-252 (DPAK) power
package in tape & reel (suffix “T4”)
General purpose switching and amplifier
MJD122-1
Device summary
Marking
MJD122
MJD122
Low voltage power Darlington transistor
TO-252 (DPAK)
TO-251 (IPAK)
Rev 10
Package
Figure 1.
(suffix “-1”)
TO-251
IPAK
R
Internal schematic diagram
1
typ. =10 K
1
2
3
W
R
2
Tape & reel
typ. =150
Packaging
Tube
(suffix “T4”)
TO-252
DPAK
MJD122
W
1
3
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