MT41J256M8HX-125IT:D Micron Technology Inc, MT41J256M8HX-125IT:D Datasheet - Page 12

• Manufacturer Part Number: MT41J256M8HX-125IT:D
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8HX-125IT:D

• Organization: 256Mx8
• Address Bus: 18b
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 185mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Functional Description
Industrial Temperature
General Notes
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface de-
signed to transfer two data words per clock cycle at the I/O pins. A single read or write
access consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal
DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at
the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, com-
mand, and address signals are registered at every positive edge of CK. Input data is
registered on the first rising edge of DQS after the WRITE preamble, and output data is
referenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a se-
lected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is
then followed by a READ or WRITE command. The address bits registered coincident
with the ACTIVATE command are used to select the bank and row to be accessed. The
address bits registered coincident with the READ or WRITE commands are used to se-
lect the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row pre-
charge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
The industrial temperature (IT) device requires that the case temperature not exceed –
40°C or +95°C. JEDEC specifications require the refresh rate to double when T
+85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when T
+95°C.
• The functionality and the timing specifications discussed in this data sheet are for the
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ term is
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DLL enable mode of operation (normal operation).
to be interpreted as any and all DQ collectively, unless specifically stated otherwise.
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR3 SDRAM
Functional Description
© 2006 Micron Technology, Inc. All rights reserved.
C
is < 0°C or >
C
exceeds