SA58631TK,115 NXP Semiconductors, SA58631TK,115 Datasheet - Page 7
SA58631TK,115
Manufacturer Part Number
SA58631TK,115
Description
IC AMP AUDIO 3W MONO AB 8HVSON
Manufacturer
NXP Semiconductors
Type
Class ABr
Datasheet
1.SA58631TK118.pdf
(21 pages)
Specifications of SA58631TK,115
Output Type
1-Channel (Mono)
Package / Case
8-HVSON
Max Output Power X Channels @ Load
3W x 1 @ 8 Ohm
Voltage - Supply
2.2 V ~ 18 V
Features
Depop, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Surface Mount
Product
Class-AB
Output Power
3 W
Available Set Gain
30 dB
Thd Plus Noise
0.15 %
Operating Supply Voltage
9 V
Maximum Power Dissipation
2300 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Audio Load Resistance
8 Ohms
Input Bias Current (max)
0.5 uA
Input Signal Type
Differential
Minimum Operating Temperature
- 40 C
Output Signal Type
Differential
Supply Type
Single
Supply Voltage (max)
18 V
Supply Voltage (min)
2.2 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
935280877115
SA58631TK-G
SA58631TK-G
SA58631TK-G
SA58631TK-G
NXP Semiconductors
13. Application information
14. Test information
SA58631_2
Product data sheet
14.1 Test conditions
The junction to ambient thermal resistance, R
when the exposed die attach paddle is soldered to 32 cm
copper heat spreader on the demo PCB. The maximum sine wave power dissipation for
T
Thus, for T
The power dissipation versus ambient temperature curve
derating profiles with ambient temperature for three sizes of heat spreaders. For a more
modest heat spreader using 9.7 cm
R
increases to 83.3 K/W.
150 25
-------------------- -
150 85
-------------------- -
Fig 3. Application diagram of SA58631 BTL differential output configuration
amb
th(j-a)
27.7
27.7
–
–
= 25 C is:
is 31.25 K/W. When the package is not soldered to a heat spreader, the R
Gain
=
=
amb
4.5 W
2.35 W
1 F
C1
V I
=
= +85 C the maximum total power dissipation is:
2
11 k
R1
------ -
R2
R1
Rev. 02 — 12 October 2007
R2
56 k
C2
47 F
MODE
SVR
IN
IN+
2
(1.5 in
4
3
2
1
SA58631
2
) area on the top side of the PCB, the
6
7
th(j-a)
GND
= 27.7 K/W for the HVSON8 package
5
8
OUT
OUT+
2
(Figure
(5 in
100 nF
2
) area of 35 m (1 ounce)
3 W BTL audio amplifier
5) shows the power
R L
SA58631
© NXP B.V. 2007. All rights reserved.
100 F
002aac007
V
CC
th(j-a)
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