IC AMP AUDIO PWR 1.9W MONO 16LLP

LM48510SDX/NOPB

Manufacturer Part NumberLM48510SDX/NOPB
DescriptionIC AMP AUDIO PWR 1.9W MONO 16LLP
ManufacturerNational Semiconductor
SeriesBoomer®, PowerWise®
TypeClass D
LM48510SDX/NOPB datasheet
 


Specifications of LM48510SDX/NOPB

Output Type1-Channel (Mono)Max Output Power X Channels @ Load1.9W x 1 @ 4 Ohm
Voltage - Supply2.7 V ~ 5 VFeaturesDepop, Differential Inputs, PWM, Short-Circuit and Thermal Protection, Shutdown
Mounting TypeSurface MountPackage / Case16-LLP
For Use WithLM48510SDBD - BOARD EVALUATION LM48510SDLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesLM48510SDX  
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LM48510
Boosted Class D Audio Power Amplifier
General Description
The LM48510 integrates a boost converter with a high effi-
ciency mono, Class D audio power amplifier to provide 1.2W
continuous power into an 8Ω speaker when operating on a
3.3V power supply with boost voltage (PV
operating on a 3.3V power supply, the LM48510 is capable of
driving a 4Ω speaker load at a continuous average output of
1.7W with less than 1% THD+N. The Class D amplifier is a
low noise, filterless PWM architecture that eliminates the out-
put filter, reducing external component count, board area
consumption, system cost, and simplifying design.
The LM48510's switching regulator is a current-mode boost
converter operating at a fixed frequency of 0.6MHz.
The LM48510 is designed for use in mobile phones and other
portable communication devices. The high (76%) efficiency
extends battery life when compared to Boosted Class AB am-
plifiers. The LM48510 features a low-power consumption
shutdown mode. Shutdown may be enabled by driving the
Shutdown pin to a logic low (GND).
The gain of the Class D is externally configurable which allows
independent gain control from multiple sources by summing
the signals. Output short circuit and Thermal shutdown pro-
tection prevent the device from damage during fault condi-
tions. Superior click and pop suppression eliminates audible
transients during power-up and shutdown.
Typical Application
FIGURE 1. Typical LM48510 Audio Amplifier Application Circuit
Boomer
®
is a registered trademark of National Semiconductor Corporation.
© 2007 National Semiconductor Corporation
Key Specifications
■ 
Quiescent Power Supply Current
■ 
Output Power
= 8Ω, THD+N
) of 5.0V. When
(R
1
L
V
= 3.3V, PV
DD
■ 
Shutdown Current
Features
Click and Pop Suppression
Low 0.01μA Shutdown Current
76% Efficiency
Filterless Class D
2.7V - 5.0V operation (V
Externally configurable gain on Class D
Very fast turn on time: 17μs
Independent Boost and Amplifier shutdown pins
Applications
Mobile Phones
PDAs
Portable media
Cameras
Handheld games
201232
October 2007
6mA (typ)
1%,
= 5.0V)
1.2W (typ)
1
0.01μA (typ)
)
DD
20123266
www.national.com

LM48510SDX/NOPB Summary of contents

  • Page 1

    ... Superior click and pop suppression eliminates audible transients during power-up and shutdown. Typical Application FIGURE 1. Typical LM48510 Audio Amplifier Application Circuit Boomer ® registered trademark of National Semiconductor Corporation. © 2007 National Semiconductor Corporation Key Specifications ■  Quiescent Power Supply Current ■  ...

  • Page 2

    Connection Diagram LLP-14 Pin DAP www.national.com LM48510SD Top View Order Number LM48510SD See NS Package Number SDA16B Name VO1 GND1 PV1 VO2 NC1 SD ...

  • Page 3

    ... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage ( Storage Temperature Input Voltage Power Dissipation (Note 3) ESD Susceptibility (Note 4) ESD Susceptibility (Note 5) Junction Temperature Electrical Characteristics V The following specifications apply for V unless otherwise specified ...

  • Page 4

    Symbol Parameter ε Output Noise OS A Gain V PSRR Power Supply Rejection Ratio CMRR Common Mode Rejection Ratio η Efficiency V Feedback Pin Reference Voltage FB Note 1: All voltages are measured with respect to the GND pin, unless ...

  • Page 5

    Typical Performance Characteristics THD+N vs Frequency = 15μH + 4Ω + 15μ 2.7V THD+N vs Frequency = 15μH + 4Ω + 15μ 3.3V THD+N vs Output Power = 15μH + ...

  • Page 6

    THD+N vs Output Power = 15μH + 4Ω + 15μ 3.3V Power Dissipation vs Output Power V = 2.7V DD Power Dissipation vs Output Power V = 4.2V DD www.national.com THD+N vs Output Power V ...

  • Page 7

    Power Supply Current vs Output Power V = 3.3V DD PSRR vs. Frequency = 15μH + 8Ω + 15μ 3.3V Supply Current vs. Supply Voltage load L 20123233 Power Supply Current vs ...

  • Page 8

    Feedback Voltage vs. Temperature Max Duty Cycle vs. Temperature R vs. V DS(ON) www.national.com Feedback Bias Current vs. Temperature 20123224 20123246 IN 20123228 8 20123225 R vs. Temperature DS(ON) 20123227 Output Power vs. Efficiency = 4Ω 201232c2 ...

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    Output Power vs. Efficiency = 8Ω 201232c3 Boost Converter Max. Load Current vs 20123265 www.national.com ...

  • Page 10

    Application Information GENERAL AMPLIFIER FUNCTION The audio amplifier portion of LM48510 is a Class D featuring a filterless modulation scheme. The differential outputs of the device switch at 300kHz from PV to GND. When there input signal ...

  • Page 11

    When selecting a ceramic capacitor, only X5R and X7R di- electric types should be used. Other types such as Z5U and Y5F have such severe loss of capacitance ...

  • Page 12

    The MBR05XX series of diodes are designed to handle a maximum average current of 0.5A. For applications exceed- ing 0.5A average but less than 1A, a Microsemi UPS5817 can be used. DUTY CYCLE The maximum duty cycle of the boost ...

  • Page 13

    FET on resistance increases at V values below 5V, since IN the internal N-FET has less gate voltage in this input voltage range (see Typical Performance Characteristics curves). Above V = 5V, the FET gate voltage is internally clamped to ...

  • Page 14

    FIGURE 3. Demo Board Schematic Reference 14 20123268 ...

  • Page 15

    Demonstration Board Layout FIGURE 4. Top Layer Silkscreen FIGURE 6. GND Layer (middle 1) FIGURE 8. Bottom Layer 20123298 FIGURE 5. Top Trace Layer 20123262 FIGURE 7. Power Trace Layer (middle 2) 20123261 FIGURE 9. Bottom Silkscreen 15 20123264 20123263 ...

  • Page 16

    Build Of Material Designator Description Cf1 CHIP CAPACITOR GENERIC CINA CHIP CAPACITOR GENERIC CINB CHIP CAPACITOR GENERIC Co CHIP CAPACITOR GENERIC Cs1 CHIP CAPACITOR GENERIC Cs2 CHIP CAPACITOR GENERIC D1 SCHOTTKY DIO L1 R1 CHIP RESISTOR GENERIC R2 CHIP RESISTOR ...

  • Page 17

    Revision History Rev Date 1.0 11/16/06 1.1 03/07/07 1.2 10/15/07 Description Initial release. Changed the Limit value on the V and V SDIH Changed the typical value of Vfb = 1. 1.5 and 0.5 respectively. SDIL ...

  • Page 18

    Physical Dimensions www.national.com inches (millimeters) unless otherwise noted LLP Package Order Number LM48510SD NS Package Number SDA16B 18 ...

  • Page 19

    Notes 19 www.national.com ...

  • Page 20

    ... National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. ...