BA682 NXP Semiconductors, BA682 Datasheet
BA682
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BA682 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET , halfpage M3D121 BA682; BA683 Band-switching diodes Product specification Supersedes data of April 1992 1996 Mar 13 ...
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... PARAMETER CONDITIONS I = 100 mA; see Fig.2 F see Fig 20V MHz see Fig MHz see Fig mA 200 MHz; see Fig mA 200 MHz; see Fig Product specification BA682; BA683 a MAM061 MIN. MAX. UNIT 35 V 100 mA 65 +150 C 150 C MAX. UNIT 1 1.5 pF 1. ...
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... Mar 13 note 1 MBG308 10 handbook, halfpage I R (nA) (1) ( 1 Solid line: maximum values. Dotted line: typical values. 3 Product specification BA682; BA683 CONDITIONS VALUE 100 Fig.3 Reverse current as a function of junction temperature. UNIT 300 K/W 600 K/W MBG307 150 o ...
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... C d (pF MHz Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 13 MBG309 handbook, halfpage ( ) BA682 BA683 ( 200 MHz; T Fig.5 4 Product specification BA682; BA683 BA683 BA682 (mA Diode forward resistance as a function of forward current; typical values. MBG310 2 10 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 13 1.7 O 1.5 0.3 0.3 3.7 MBA388 - 2 3.3 Fig.6 SOD80. 5 Product specification BA682; BA683 ...