CY7C1325F-100AI Cypress Semiconductor Corporation., CY7C1325F-100AI Datasheet

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CY7C1325F-100AI

Manufacturer Part Number
CY7C1325F-100AI
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05215 Rev. *B
Features
Functional Description
The CY7C1325F is a 262,144 x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
Note:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
• 256K X 18 common I/O
• 3.3V –5% and +10% core power supply (V
• 2.5V or 3.3V I/O supply (V
• Fast clock-to-output times
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP and 119-ball
• “ZZ” Sleep Mode option
A0,A1,A
MODE
Logic Block Diagram
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
— 8.0 ns (100-MHz version)
— 11.0ns (66-MHz version)
Pentium
BGA packages
ADSC
ADSP
ADV
BW
BWE
BW
CLK
GW
CE
CE
CE
OE
ZZ
A
B
1
2
3
interleaved or linear burst sequences
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
DQ
[1]
DQ
CONTROL
DDQ
REGISTER
ENABLE
SLEEP
A
B
,DQP
,DQP
)
B
A
COUNTER AND
CLR
4-Mb (256K x 18) Flow-Through Sync SRAM
BURST
LOGIC
DD
Q1
Q0
3901 North First Street
A[1:0]
)
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
( CE
Control inputs ( ADSC , ADSP , and ADV ), Write Enables
( BW
i nputs include the Output Enable ( OE ) and the ZZ pin .
The CY7C1325F allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor ( ADSP ) or
Address Strobe Controller ( ADSC ) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin ( ADV ).
The CY7C1325F operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and
JESD8-5-compatible.
WRITE DRIVER
WRITE DRIVER
DQ
DQ
1
[A:B]
B
A
), depth-expansion Chip Enables (CE
,DQP
,DQP
, and BWE ), and Global Write ( GW ). Asynchronous
B
A
San Jose
MEMORY
ARRAY
,
CA 95134
outputs
SENSE
AMPS
Revised January 13, 2004
are
BUFFERS
OUTPUT
CY7C1325F
2
JEDEC-standard
and CE
REGISTERS
408-943-2600
INPUT
3
), Burst
DQs
DQP
DQP
A
B
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CY7C1325F-100AI Summary of contents

Page 1

... Asynchronous output enable • Offered in JEDEC-standard 100-pin TQFP and 119-ball BGA packages • “ZZ” Sleep Mode option [1] Functional Description The CY7C1325F is a 262,144 x 18 synchronous cache RAM designed to interface with high-speed microprocessors with Logic Block Diagram ADDRESS A0,A1,A REGISTER MODE ...

Page 2

... DQP DDQ Document #: 38-05215 Rev. *B 133 MHz 117 MHz 100 MHz 6.5 7.5 225 220 40 40 100-Pin TQFP CY7C1325F CY7C1325F 66 MHz Unit 8.0 11.0 ns 205 195 DDQ DQP A 73 ...

Page 3

... Used in conjunction with CE ADSP is ignored HIGH. 1 Input- Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Synchronous Used in conjunction with CE Input- Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Synchronous Used in conjunction with CE CY7C1325F DDQ ...

Page 4

... When tied left floating selects interleaved burst sequence. DD This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. No Connects. Not Internally connected to the die. CY7C1325F Description are also loaded into [1:0] is deasserted HIGH 1 are also loaded into ...

Page 5

... Maximum access delay from the clock rise ( 6.5 ns (133-MHz device). C0 The CY7C1325F supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 6

... and BWE = L or GW= L. WRITE = H when all Byte write enable signals ( CY7C1325F Min. Max. Unit CYC 2t ns CYC 2t ns CYC 0 ns ADV WRITE OE CLK L-H three-state X ...

Page 7

... Truth Table for Read/Write Function Read Read Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write All Bytes Write All Bytes Document #: 38-05215 Rev. *B CY7C1325F BW GW BWE ...

Page 8

... Device Deselected, All speeds DD ≥ V ≤ 0.3V, V – 0. inputs static /2), undershoot: V (AC) > -2V (Pulse width less than t CYC IL (min.) within 200ms. During this time V < V and CY7C1325F Ambient ] DDQ 3.3V −5%/+10% 2.5V – CY7C1345F Min. Max. Unit 3.135 3.6 V 2.375 ...

Page 9

... DDQ R = 317Ω 3.3V V OUTPUT GND 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2. OUTPUT GND =1538Ω INCLUDING JIG AND (b) SCOPE CY7C1325F CY7C1345F Min. Max TQFP BGA Package. Package Units °C/W 41.83 47.63 °C/W 9.99 11.71 TQFP BGA Package Package ...

Page 10

... V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ = 2.5V. DDQ CY7C1325F 100 MHz 66 MHz Unit 4.0 5.0 ns 4.0 5.0 ns 7.5 8.0 11.0 ns 2.0 2 3.5 3.5 5.0 ns 3.5 3.5 6 ...

Page 11

... ADV suspends burst t CDV t OELZ t DOH Q(A2 BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH LOW. [A:B] CY7C1325F Deselect Cycle t CHZ Q( Q(A2 Burst wraps around to its initial state is HIGH LOW HIGH Page [+] Feedback ...

Page 12

... Data Out (Q) BURST READ Single WRITE Document #: 38-05215 Rev. *B ADSC extends burst t t WEH WES ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED CY7C1325F t ADS t ADH A3 t WES t WEH t ADVS t ADVH D(A3 Extended BURST WRITE Page [+] Feedback ...

Page 13

... The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC . 19 HIGH. Document #: 38-05215 Rev WES WEH OELZ D(A3) t CDV Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1325F A5 A6 D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page [+] Feedback ...

Page 14

... CY7C1325F-133BGC CY7C1325F-133AI CY7C1325F-133BGI 117 CY7C1325F-117AC CY7C1325F-117BGC CY7C1325F-117AI CY7C1325F-117BGI 100 CY7C1325F-100AC CY7C1325F-100BGC CY7C1325F-100AI CY7C1325F-100BGI 66 CY7C1325F-66AC CY7C1325F-66BGC CY7C1325F-66AI CY7C1325F-66BGI Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05215 Rev. *B High-Z DON’T CARE Package ...

Page 15

... Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05215 Rev. *B CY7C1325F 51-85050-*A Page [+] Feedback ...

Page 16

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-Lead BGA ( 2.4 mm) BG119 CY7C1325F 51-85115-*B Page ...

Page 17

... Document Title: CY7C1325B 4-Mb (256K x 18) Flow-Through Sync SRAM Document Number: 38-05215 REV. ECN NO. Issue Date ** 119834 01/06/03 *A 123848 01/18/03 *B 200663 12/19/03 Document #: 38-05215 Rev. *B Orig. of Change Description of Change HGK New Data Sheet AJH Added power-up requirements to AC test loads and waveforms information SWI Final Data Sheet CY7C1325F Page [+] Feedback ...

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