SD1534-08

Manufacturer Part NumberSD1534-08
ManufacturerAdvanced Semiconductor, Inc.
SD1534-08 datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI SD1534-08
The
is a Common
Base Device Designed for DME IFF,
and TACAN Pulse Applications.
FEATURES INCLUDE:
Gold Metalization
Input Matching
Emitter Ballasting
MAXIMUM RATINGS
5.5 A
I
C
65 V
V
CES
O
218 W @ T
= 25
P
C
DISS
O
O
-65
C to +200
C
T
J
O
O
T
-65
C to +150
C
STG
O
0.80
C/W
JC
CHARACTERISTICS
O
T
= 25
C
SYMBOL
TEST CONDITIONS
BV
I
= 10 mA
CBO
C
BV
I
= 25 mA
CES
C
BV
I
= 10 mA
EBO
E
I
V
= 50 V
CES
CE
h
V
= 5.0 V
I
FE
CE
P
V
= 50 V
P
= 13.5 W
G
CC
IN
= 10 S
P
PULSE WIDTH
OUT
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
PACKAGE STYLE .250 SQ 2L FL
C
1 = COLLECTOR
C
= 100 mA
C
f = 1025 to 1150 MHz
= 1.0%
DUTY CYCLE
Specifications are subject to change without notice.
ASI SD1534-08
1
3
2
2 = EMITTER
MINIMUM TYPICAL MAXIMUM
65
65
3.5
5.0
10
200
7.5
75
3 = BASE
UNITS
V
V
mA
---
dB
W
REV. A
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