PTB20038

Manufacturer Part NumberPTB20038
ManufacturerAdvanced Semiconductor, Inc.
PTB20038 datasheet
 
1
Page 1
2
Page 2
Page 1/2

Download datasheet (23Kb)Embed
Next
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI PTB20038
The
is Designed for
General Purpose Class AB Power
Amplifier Applications up to 900 MHz.
FEATURES:
25 W, 860-900 MHz
Silicon Nitride Passivated
Omnigold™ Metalization System
MAXIMUM RATINGS
6.7 A
I
C
50 V
V
CB
P
65 W @ T
= 25 °C
C
DISS
T
-40 °C to +150 °C
J
-40 °C to +150 °C
T
STG
2.7 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
BV
I
= 100 mA
C
CEO
BV
I
= 100 mA
C
CES
BV
I
= 5.0 mA
E
EBO
h
V
= 5.0 V
CE
FE
P
G
V
= 25 V
CC
C
P
G
V
= 25 V
CC
I
C
CQ
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
PACKAGE STYLE .400 6L FLG
1 = COLLECTOR
MINIMUM TYPICAL MAXIMUM
I
= 1.0 A
C
P
= 25 W
f = 900 MHz
OUT
P
= 10 W
f = 900 MHz
OUT
Specifications are subject to change without notice.
PTB20038
2 = BASE
3,4,5,6 = EMITTER
25
55
3.5
20
100
9.0
50
10
11
35
30:1
FAX (818) 765-3004
UNITS
V
V
V
---
dB
%
dB
%
---
REV. A
1/2