BSM15GD60DN2

Manufacturer Part NumberBSM15GD60DN2
ManufacturerSiemens Semiconductor Group
BSM15GD60DN2 datasheet
 


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IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 15 GD 60 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 40 °C
C
Pulsed collector current, t
T
= 40 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
Package
CE
C
600V
15A
ECONOPACK 1
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
BSM 15 GD 60 DN2
Ordering Code
C67076-A2510-A67
Values
Unit
600
V
600
± 20
A
15
30
W
50
+ 125
°C
-55 ... + 150
2.9
K/W
3.5
2500
Vac
12
mm
10
F
sec
40 / 125 / 56
Jan-09-1997

BSM15GD60DN2 Summary of contents

  • Page 1

    IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter ...

  • Page 2

    Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 CE, C Collector-emitter saturation voltage ° ...

  • Page 3

    Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 ...

  • Page 4

    Power dissipation tot C parameter: T 150 ° tot Collector current ...

  • Page 5

    Typ. output characteristics parameter µ ° 17V 15V 24 I 13V C 11V ...

  • Page 6

    Typ. gate charge Gate parameter puls 100 Reverse biased safe ...

  • Page 7

    Typ. switching time inductive load , T = 125° par 300 ± ...

  • Page 8

    Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 ...

  • Page 9

    Package Outlines Dimensions in mm Weight Semiconductor Group Circuit Diagram 9 BSM DN2 Jan-09-1997 ...