BSM15GD60DN2 Siemens Semiconductor Group, BSM15GD60DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM15GD60DN2
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
Semiconductor Group
C
tot
I
tot
C
= ( T
= ( T
55
45
40
35
30
25
20
15
10
17
14
12
10
W
A
5
0
8
6
4
2
0
C
0
0
)
C
)
20
j
GE
20
150 °C
40
15 V , T
40
60
60
j
80
150 °C
100
80
120
100
T
T
°C
°C
C
C
160
130
4
Safe operating area
I
parameter: D = 0 , T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( V
K/W
10
10
10
10
10
10
10
10
10
10
= ( t
A
-1
-2
-1
-2
-3
2
1
0
1
0
10
10
CE
0
-5
)
p
)
single pulse
10
p
-4
10
/ T
C
1
= 25°C , T
10
BSM 15 GD 60 DN2
-3
10
2
10
j
-2
DC
IGBT
t p = 24.0µs
150 °C
V
100 µs
1 ms
10 ms
D = 0.50
Jan-09-1997
10
10
V
t
-1
3
p
0.20
0.10
0.05
0.02
0.01
CE
s
10
0