BSM15GD60DN2 Siemens Semiconductor Group, BSM15GD60DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM15GD60DN2
• Manufacturer: Siemens Semiconductor Group

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
10
100
C puls
)
GE
)
,
20
= 15 V
200
T
= 15 A
j
= 150°C
30
300
100 V
40
400
50
500
60
600
70
300 V
Q
nC
V
V
Gate
CE
800
90
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
-2
8
6
4
2
0
1
0
0
CE
0
CE
)
) , T
100
5
GE
GE
j
= ± 15 V, t
= 150°C
200
= 0 V, f = 1 MHz
10
300
15
BSM 15 GD 60 DN2
400
SC
20
500
25
10 µs, L < 50 nH
600
30
Jan-09-1997
V
V
V
V
Crss
CE
CE
Ciss
Coss
800
40