ADA4937-1YCPZ-R7 Analog Devices Inc, ADA4937-1YCPZ-R7 Datasheet - Page 7

IC ADC DRIVER DIFF 16-LFCSP

ADA4937-1YCPZ-R7

Manufacturer Part Number
ADA4937-1YCPZ-R7
Description
IC ADC DRIVER DIFF 16-LFCSP
Manufacturer
Analog Devices Inc
Type
ADC Driverr
Datasheet

Specifications of ADA4937-1YCPZ-R7

Design Resources
Driving AD9233/46/54 ADCs in AC-Coupled Baseband Appls (CN0051)
Applications
Data Acquisition
Mounting Type
Surface Mount
Package / Case
16-LFCSP
No. Of Amplifiers
1
Input Offset Voltage
2.5mV
Bandwidth
1.9GHz
Slew Rate
6000V/µs
Supply Voltage Range
3V To 5.25V
Supply Current
39.5mA
Amplifier Case Style
LFCSP
No. Of Pins
16
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ADA4937-1YCPZ-R7TR

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ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Supply Voltage
Power Dissipation
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
to a high thermal conductivity 2s2p circuit board, as described
in EIA/JESD51-7.
Table 6. Thermal Resistance
Package Type
16-Lead LFCSP (Exposed Pad)
24-Lead LFCSP (Exposed Pad)
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4937-x packages
is limited by the associated rise in junction temperature (T
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the ADA4937-x. Exceeding a junction temperature
of 150°C for an extended period can result in changes in the
silicon devices, potentially causing failure.
JA
is specified for the device (including exposed pad) soldered
θ
95
67
JA
Rating
5.5 V
See Figure 4
−65°C to +125°C
−40°C to +105°C
300°C
150°C
Unit
°C/W
°C/W
J
) on
Rev. C | Page 7 of 28
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the voltage
between the supply pins (V
The power dissipated due to the load drive depends upon the
particular application. The power due to load drive is calculated
by multiplying the load current by the associated voltage drop
across the device. RMS voltages and currents must be used in
these calculations.
Airflow increases heat dissipation, effectively reducing θ
addition, more metal directly in contact with the package
leads/exposed pad from metal traces, through holes, ground,
and power planes reduces θ
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the ADA4937-1 single
16-lead LFCSP (95°C/W), and the ADA4937-2 dual 24-lead
LFCSP (67°C/W) on a JEDEC standard 4-layer board.
ESD CAUTION
Figure 4. Maximum Power Dissipation vs. Temperature, 4-Layer Board
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40
–30 –20 –10 0
ADA4937-1
AMBIENT TEMPERATURE (°C)
10 20 30 40 50 60 70 80
S
ADA4937-1/ADA4937-2
JA
ADA4937-2
) times the quiescent current (I
.
D
) is the sum of the
90 100
110
JA
. In
S
).

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