BSM300GA120DN2E3166 Infineon Technologies AG, BSM300GA120DN2E3166 Datasheet
BSM300GA120DN2E3166
Related parts for BSM300GA120DN2E3166
BSM300GA120DN2E3166 Summary of contents
Page 1
... SINGLE SWITCH 1 Symbol CGR Cpuls P tot stg R thJC R thJCD BSM300GA120DN2E3166 Ordering Code C67070-A2007-A70 Values Unit 1200 V 1200 ± 430 300 860 600 W 2500 + 150 °C -55 ... + 150 0.05 K/W 0.065 2500 Vac 150 / 56 Mar-29-1996 ...
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... GE Reverse transfer capacitance MHz CE GE Semiconductor Group = 25 °C, unless otherwise specified j Symbol V GE(th) V CE(sat °C = 125 °C I CES = 25 ° 125 ° GES iss C oss C rss 2 BSM300GA120DN2E3166 Values min. typ. max. 4.5 5.5 6 3 320 124 - - - 3 1.2 - ...
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... Semiconductor Group = 25 °C, unless otherwise specified j Symbol = 125 ° d(on) = 300 300 d(off) = 300 300 BSM300GA120DN2E3166 Values min. typ. max. - 100 200 - 110 220 - 600 800 - 80 120 1.4 1.8 2 Unit ...
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... T C Transient thermal impedance parameter 150 ° thJC 100 120 °C 160 BSM300GA120DN2E3166 ) CE = 25° IGBT = ( single pulse ...
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... Typ. output characteristics parameter: t 600 500 I C 450 400 350 300 250 200 150 100 BSM300GA120DN2E3166 ) µ 125 ° 17V 15V 13V 11V Mar-29-1996 ...
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... T = 150°C Cpuls CE j parameter 2 Cpuls C 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 1200 Semiconductor Group BSM300GA120DN2E3166 Typ. capacitances parameter 800 Gate Short circuit safe operating area Csc ...
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... A 700 I C Typ. switching losses = 125° 3.3 par 140 mWs Eon E 100 Eoff 500 A 700 BSM300GA120DN2E3166 ) , inductive load , T = 125° 600 ± inductive load , T = 125° 600V ± ...
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... Semiconductor Group Transient thermal impedance parameter K/W =25° thJC - 2 BSM300GA120DN2E3166 Diode ) 0.50 single pulse - Mar-29-1996 0.20 0.10 0.05 0.02 0. ...
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... Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM300GA120DN2E3166 Mar-29-1996 ...