BSM300GA120DN2E3166 Infineon Technologies AG, BSM300GA120DN2E3166 Datasheet - Page 6

• Manufacturer Part Number: BSM300GA120DN2E3166
• Description: 1200V/430A IGBT power module
• Manufacturer: Infineon Technologies AG

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200 400 600 800 1000120014001600 nC 2000
200
C puls
)
GE
)
,
= 15 V
400
T
= 300 A
j
= 150°C
600
800 1000 1200
600 V
Q
V
V
800 V
Gate
CE
1600
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
200
5
GE
GE
BSM300GA120DN2E3166
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800
SC
20
1000 1200
25
10 µs, L < 20 nH
30
Mar-29-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40