CEM4435A

Manufacturer Part NumberCEM4435A
ManufacturerChino-Excel Technology Corp
CEM4435A datasheets
 


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P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8A, R
= 20m
@V
DS(ON)
R
= 33m
@V
DS(ON)
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
Specification and data are subject to change without notice .
= -10V.
GS
= -4.5V.
GS
.
DS(ON)
SO-8
1
T
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
,T
J
stg
Symbol
b
R
JA
5 - 52
CEM4435A
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
Limit
Units
-30
V
20
V
-8
A
-50
A
2.5
W
-55 to 150
C
Limit
Units
50
C/W
Rev 1.
2005.March
http://www.cetsemi.com