CEU9926 Chino-Excel Technology Corp, CEU9926 Datasheet
CEU9926
Related parts for CEU9926
CEU9926 Summary of contents
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... CED9926/CEU9926 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 20V , 26A , R =30m DS(ON) R =40m DS(ON) 6 Super high dense cell design for extremely low R High power and current handling capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage ...
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... Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CED9926/CEU9926 = 25 C unless otherwise noted) C Symbol Condition V = 0V, I 250µ DSS ...
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... CED9926/CEU9926 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 6 Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1000 800 600 400 200 ...
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... CED9926/CEU9926 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 - 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current =10V Qg, Total Gate Charge (nC) Figure 9 ...
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... CED9926/CEU9926 GEN 6 Figure 11. Switching Test Circuit 0 10 D=0.5 0 0.1 0.05 0. Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse - Square Wave Pulse Duration (sec) 6- d(off) d(on) 90% V OUT INVERTED ...