FLK017WF Eudyna Devices Inc, FLK017WF Datasheet

FLK017WF

Manufacturer Part Number

FLK017WF

Description

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLK017WF.pdf (4 pages)

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FLK017WF

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Edition 1.1

July 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

CASE STYLE: WF

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C)

FEATURES

• High Output Power: P 1dB = 20.5dBm(Typ.)

• High Gain: G 1dB = 7.5dB(Typ.)

• High PAE: add = 26%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLK017WF is a power GaAs FET that is designed for general

purpose applications in the Ku-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Noise Figure

Associated Gain

Thermal Resistance

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145 C.

gate resistance of 3000 .

Item

Symbol

V GSO

I DSS

G 1dB

P 1dB

Gas

Symbol

g m

R th

V p

add

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 40mA

V DS = 5V, I DS = 3mA

I GS = -3 A

V DS = 10V,

I DS

f = 14.5 GHz

V DS = 3V,

I DS

f = 12 GHz

Channel to Case

Test Conditions

0.6 I DSS (Typ.),

20mA (Typ.),

Condition

T c = 25 C

X, Ku Band Power GaAs FET

Min.

19.5

-1.0

6.0

-5

-65 to +175

Rating

1.15

Limit

Typ.

175

20.5

-2.0

7.5

2.5

FLK017WF

-5

G.C.P.: Gain Compression Point

Max.

-3.5

130

dBm

Unit

C/W

Related parts for FLK017WF

FLK017WF Summary of contents

Page 1

... High PAE: add = 26%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance ...

Page 2

... FLK017WF X, Ku Band Power GaAs FET POWER DERATING CURVE 100 150 Case Temperature ( C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 OUTPUT POWER vs. INPUT POWER f = 14.5GHz I DS 0.6 I DSS V DS =10V V DS =8. out 18 16 add Input Power (dBm) ...

Page 3

... Download S-Parameters, click here 3 FLK017WF 0.2 0.1 8GHz 8GHz 16GHz -90 S22 MAG ANG .852 -7.9 .850 -16.3 .818 -93 ...

Page 4

... FLK017WF X, Ku Band Power GaAs FET Ø1.6 0.01 (0.063) Case Style "WF" Metal-Ceramic Hermetic Package 2.5 (0.098 0.6 (0.024) 8.5 0.2 (0.335) 6.1 0.1 (0.240) 4 0.1 0.05 (0.004) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) Unit: mm(inches) ...

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