fll800iq-2c Eudyna Devices Inc, fll800iq-2c Datasheet

fll800iq-2c

Manufacturer Part Number

fll800iq-2c

Description

L-band High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL800IQ-2C.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FLL800IQ-2C

Manufacturer:

FUJITSU/富士通

Quantity:

20 000

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ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

CASE STYLE: IU

Edition 1.1

October 2004

DESCRIPTION

The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power L-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is uniquely suited for use in W-CDMA and IMT 2000 base

station amplifiers as it offers high gain, long term reliability and ease of use.

FEATURES

• Push-Pull Configuration

• High Power Output: 80W (Typ.)

• High PAE: 50% (Typ.)

• Broad Frequency Range: 2100 to 2200 MHz.

• Suitable for class AB operation.

APPLICATIONS

• Solid State Base-Station Power Amplifier.

• W-CDMA and IMT 2000 Communication Systems.

Drain Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power

Linear Gain

Drain Current

Power-Added Efficiency

Thermal Resistance

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 10Ω.

Item

Symbol

DSR

DSS

GSO

add

stg

out

f = 2.17 GHz

Pin = 40.0dBm

Channel to Case

= 2.0A

= -2.2mA

= 5V, V

= 5V, I

= 12V

Conditions

Tc = 25°C

Condition

= 220mA

= 0V

L-Band High Power GaAs FET

Min.

48.0

10.0

-0.1

-5

-65 to +175

FLL800IQ-2C

Rating

+175

136

Limits

-5

Typ.

49.0

11.0

11.5

-0.3

0.8

Max.

-0.5

1.1

°C/W

dBm

Unit

°C

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fll800iq-2c Summary of contents

Page 1

... Broad Frequency Range: 2100 to 2200 MHz. • Suitable for class AB operation. DESCRIPTION The FLL800IQ- Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...

Page 2

... FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER 12V 2.0A - 2.14GHz W-CDMA Single Signal -30 +5MHz -5MHz +10MHz -35 -10MHz -40 -45 -50 -55 -60 - Output Power (dBm) OUTPUT POWER vs. FREQUENCY 12V 2.0A 50 Wide Band Tuned ...

Page 3

... FLL800IQ-2C S22 MAG ANG .879 173.1 .864 172.5 .855 172.1 .840 172.0 .823 172.1 .812 172.8 .809 173.7 .821 174.9 .840 175.3 .870 174.4 .891 172.2 .893 168.7 ...

Page 4

... FLL800IQ-2C L-Band High Power GaAs FET 2 3 –0.2 4-R1.3 4 For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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