FLL120MK Eudyna Devices Inc, FLL120MK Datasheet

FLL120MK

Manufacturer Part Number

FLL120MK

Description

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL120MK.pdf (4 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FLL120MK

Manufacturer:

SUMITOMO

Quantity:

20 000

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CASE STYLE: MK

Edition 1.1

July 1999

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

FEATURES

• High Output Power: P 1dB = 40.0dBm (Typ.)

• High Gain: G 1dB = 10.0dB (Typ.)

• High PAE: η add = 40% (Typ.)

• Proven Reliability

• Hermetically Sealed Package

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

DESCRIPTION

The FLL120MK is a Power GaAs FET that is specifically designed to

provide high power at L-Band frequencies with gain, linearity and

efficiency superior to that of silicon devices. The performance in

multitone environments for Class AB operation make them ideally

suited for base station applications.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 50Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

R th

g m

Symbol

V p

V DS

V GS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 2400mA

V DS = 5V, I DS =240mA

I GS = -240µA

V DS = 10V

I DS = 0.55 I DSS (Typ.),

f = 2.3GHz

Channel to Case

L-Band Medium & High Power GaAs FET

Test Conditions

Condition

T c = 25°C

Min.

39.5

-1.0

9.0

-5

-65 to +175

Rating

Limit

4000 6000

2000

Typ.

37.5

40.0

10.0

175

-2.0

3.3

-5

FLL120MK

G.C.P.: Gain Compression Point

Max.

-3.5

4.0

°C/W

dBm

Unit

°C

Related parts for FLL120MK

FLL120MK Summary of contents

Page 1

... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...

Page 2

... FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 Case Temperature (° DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 4000 3000 2000 1000 0 150 200 OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.55 I DSS f = 2.3 GHz P out η ...

Page 3

... Download S-Parameters, click here 3 FLL120MK S 21 +90° 5.0 GHz 1 4.5 4.0 1.5 4.5 4.0 3.0 2.0 5.0 GHz 1 0.5GHz 0° 0.1 0.2 -90° S22 MAG ANG .824 179.4 .813 178.8 .810 177.7 .792 176.5 .778 174.0 ...

Page 4

... FLL120MK L-Band Medium & High Power GaAs FET For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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