FLK027WG Eudyna Devices Inc, FLK027WG Datasheet

FLK027WG

Manufacturer Part Number

FLK027WG

Description

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLK027WG.pdf (4 pages)

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Edition 1.1

July 1999

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

CASE STYLE: WG

FEATURES

• High Output Power: P 1dB = 24.0dBm(Typ.)

• High Gain: G 1dB = 7.0dB(Typ.)

• High PAE: η add = 32%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLK027WG is a power GaAs FET that is designed for general

purpose applications in the Ku-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 2000Ω.

Item

Symbol

V GSO

G 1dB

P 1dB

I DSS

P 1dB

η add

Symbol

R th

g m

V p

V GS

V DS

T stg

T ch

P T

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 65mA

V DS = 5V, I DS = 5mA

I GS = -5µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 14.5 GHz

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 12 GHz

Test Conditions

Condition

T c = 25°C

X, Ku Band Power GaAs FET

Min.

23.0

-1.0

6.0

-5

-65 to +175

Rating

1.875

FLK027WG

175

Limit

Typ.

24.0

-2.0

100

-5

7.0

G.C.P.: Gain Compression Point

Max.

150

-3.5

°C/W

dBm

Unit

dBm

Unit

°C

Related parts for FLK027WG

FLK027WG Summary of contents

Page 1

... High PAE: η add = 32%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLK027WG X, Ku Band Power GaAs FET POWER DERATING CURVE 100 150 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER f = 14.5GHz I DS ≈ 0.6 I DSS V DS =10V =8. out η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLK027WG S 21 +90° 0.2 0.1 SCALE FOR | 16GHz 0° 15 8GHz 9 8GHz ...

Page 4

... FLK027WG X, Ku Band Power GaAs FET 2-Ø1.6±0.01 (0.063) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11 0.5 (0.020) 8.5±0.2 2.5 Max. (0.335) (0.098) 1. Gate 2. Source 3. Drain 6.1±0.1 4. Source (0.240) Unit: mm(inches) 4 0.1±0.05 (0.004) 0.8±0.1 (0.031) ...

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