BGD712C NXP Semiconductors, BGD712C Datasheet

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BGD712C

Manufacturer Part Number
BGD712C
Description
Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC)
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply
voltage of 24 V (DC).
Table 1.
[1]
Symbol
G
I
tot
p
BGD712C
750 MHz, 18.5 dB gain power doubler amplifier
Rev. 3 — 29 September 2010
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
CATV systems operating in the 40 MHz to 750 MHz frequency range.
The module normally operates at V
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Parameter
power gain
total current
Quick reference data
B
= 24 V, but is able to withstand supply transients up to 30 V.
Conditions
f = 45 MHz
f = 750 MHz
V
B
= 24 V
[1]
Min
18.2
19
380
Product data sheet
Typ
-
-
-
Max
18.8
20
410
Unit
dB
dB
mA

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BGD712C Summary of contents

Page 1

... BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Rev. 3 — 29 September 2010 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. ...

Page 2

... Limiting values Parameter Conditions supply voltage input voltage storage temperature mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2010 BGD712C Simplified outline Graphic symbol Version SOT115J Min ...

Page 3

... dBmV o measured at 548.5 MHz MHz f = 750 MHz = 24 V, but is able to withstand supply transients All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2010 BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Ω . Min Typ 18.2 - 19.0 - 0.5 ...

Page 4

... MHz, 18.5 dB gain power doubler amplifier 8.2 6-32 44.25 7.8 UNC EUROPEAN PROJECTION BGD712C SOT115J max. 0.25 0.7 0.1 3.8 ISSUE DATE 04-02-04 10-06-18 © NXP B.V. 2010. All rights reserved ...

Page 5

... Package outline drawings have been updated to the latest version. Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2010 BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Change notice Supersedes - BGD712C v.2 - BGD712C v © NXP B.V. 2010. All rights reserved ...

Page 6

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2010 BGD712C © NXP B.V. 2010. All rights reserved ...

Page 7

... NXP Semiconductors’ product specifications. 8.4 Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2010 BGD712C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGD712C All rights reserved. Date of release: 29 September 2010 Document identifier: BGD712C ...

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