BYC5-600 NXP Semiconductors, BYC5-600 Datasheet - Page 2

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package

BYC5-600

Manufacturer Part Number
BYC5-600
Description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1;3 Semiconductors
FEATURES
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC5-600 is supplied in the
SOD59 (TO220AC) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCES
March 2001
Rectifier diode
ultrafast, low switching loss
SYMBOL PARAMETER
V
V
V
I
I
I
T
T
SYMBOL PARAMETER
R
R
F(AV)
FRM
FSM
RRM
RWM
R
stg
j
th j-mb
th j-a
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
Repetitive peak forward current δ = 0.5; with reapplied V
Non-repetitive peak forward
current.
Storage temperature
Operating junction temperature
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PINNING
SYMBOL
PIN
tab
1
2
k
1
CONDITIONS
T
δ = 0.5; with reapplied V
T
T
t = 10 ms
t = 8.3 ms
sinusoidal; T
with reapplied V
CONDITIONS
in free air.
mb
mb
mb
cathode
anode
cathode
≤ 110 ˚C
≤ 89 ˚C
≤ 89 ˚C
DESCRIPTION
1
j
= 150˚C prior to surge
RWM(max)
a
2
RRM(max)
RRM(max)
;
;
QUICK REFERENCE DATA
SOD59 (TO220AC)
MIN.
MIN.
-
-
-40
-
-
-
-
-
-
-
-
t
rr
V
V
= 19 ns (typ)
Product specification
I
F(AV)
TYP.
F
tab
R
60
≤ 1.75 V
= 600 V
-
= 5 A
1
MAX.
600
600
500
150
150
2
10
40
44
BYC5-600
MAX.
5
2.5
-
Rev 1.400
UNIT
UNIT
K/W
K/W
˚C
˚C
V
V
V
A
A
A
A

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