BYV29-400 NXP Semiconductors, BYV29-400 Datasheet - Page 3

• Manufacturer Part Number: BYV29-400
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
September 1998
Rectifier diodes
ultrafast
j
SYMBOL PARAMETER
V
I
Q
t
I
V
R
rr
rrm
I
= 25 ˚C unless otherwise stated
I
F
fr
R
V F
s
F
I
F
Fig.1. Definition of t
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
I
rrm
Fig.2. Definition of V
dI
dt
Q
F
s
t
rr
rr
, Q
s
and I
fr
V F
10%
rrm
time
time
CONDITIONS
I
I
I
V
V
I
dI
I
dI
I
dI
I
F
F
F
F
F
F
F
time
R
R
F
F
F
= 8 A; T
= 8 A
= 20 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
100%
/dt = 20 A/µs
/dt = 100 A/µs
/dt = 50 A/µs; T
= V
= V
V
fr
RRM
RRM
; T
j
2
= 150˚C
F
R
R
j
/dt = 10 A/µs
= 100 ˚C
R
≥ 30 V;
≥ 30 V;
≥ 30 V;
15
10
Fig.3. Maximum forward dissipation P
Fig.4. Maximum forward dissipation P
5
0
12
10
8
6
4
2
0
0
j
PF / W
0
Vo = 0.8900 V
Rs = 0.0190 Ohms
= 100˚C
PF / W
sinusoidal current waveform where a = form
Vo = 0.89V
Rs = 0.019 Ohms
square wave where I
2
0.1
factor = I
5
4
0.2
IF(AV) / A
4
2.8
IF(AV) / A
BYV29
MIN.
BYV29
F(RMS)
-
-
-
-
-
-
-
-
-
0.5
2.2
F(AV)
6
I
/ I
TYP.
0.90
1.05
1.20
10
2.0
0.1
4.0
2.5
40
50
F(AV)
=I
Product specification
BYV29 series
F(RMS)
1.9
t
p
.
T
Tmb(max) / C
Tmb(max) / C
MAX.
8
1.03
1.25
1.40
0.35
x √ D.
5.5
50
60
60
D =
F
F
a = 1.57
-
D = 1.0
= f(I
= f(I
T
t
p
t
Rev 1.300
F(AV)
F(AV)
15
UNIT
10
112.5
125
137.5
150
mA
µA
nC
120
125
130
135
140
145
150
ns
V
V
V
A
V
);
);