BYV79E-200 NXP Semiconductors, BYV79E-200 Datasheet - Page 2

• Manufacturer Part Number: BYV79E-200
• Description: Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
July 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
T
T
SYMBOL PARAMETER
V
F(AV)
FRM
FSM
RRM
RSM
stg
j
RRM
RWM
R
C
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
Repetitive peak forward current t = 25 μs; δ = 0.5;
Non-repetitive peak forward
current
Repetitive peak reverse current t
Non-repetitive peak reverse
current
Storage temperature
Operating junction temperature
Electrostatic discharge
capacitor voltage
1
PINNING
SYMBOL
PIN
tab
1
2
1
k
CONDITIONS
T
square wave
δ = 0.5; T
T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
p
p
mb
mb
RWM(max)
= 2 μs; δ = 0.001
= 100 μs
cathode
anode
cathode
≤ 145˚C
≤ 120 ˚C
DESCRIPTION
mb
1
≤ 120 ˚C
BYV79E
a
2
MIN.
-40
QUICK REFERENCE DATA
-
-
-
-
-
-
-
-
-
-
SOD59 (TO220AC)
MIN.
-150
150
150
150
V
-
R
= 150 V/ 200 V
I
I
F(AV)
RRM
V
t
MAX.
Product specification
rr
tab
BYV79E series
150
160
150
150
F
0.2
0.2
14
28
≤ 30 ns
≤ 0.9 V
≤ 0.2 A
= 14 A
1
MAX.
-200
200
200
200
2
8
Rev 1.200
UNIT
UNIT
˚C
˚C
kV
V
V
V
A
A
A
A
A
A