BAT74 NXP Semiconductors, BAT74 Datasheet - Page 2

Planar Schottky barrier double diode with an integrated guard ring for stress protection

BAT74

Manufacturer Part Number
BAT74
Description
Planar Schottky barrier double diode with an integrated guard ring for stress protection
Manufacturer
NXP Semiconductors
Datasheet

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3. Ordering information
4. Marking
5. Limiting values
BAT74_3
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Type number Package
BAT74
Type number
BAT74
Symbol
Per diode
V
I
I
I
P
T
T
T
Double diode operation
V
I
I
F
FRM
FSM
F
FRM
j
amb
stg
R
tot
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Series connection.
If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
reverse voltage
forward current
repetitive peak forward
current
Ordering information
Marking codes
Limiting values
Name
-
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2010
Description
plastic surface-mounted package; 4 leads
T
Conditions
t
t
t
p
p
p
amb
≤ 1 s; δ ≤ 0.5
< 10 ms
≤ 1 s; δ ≤ 0.5
≤ 25 °C
Marking code
*L4
Schottky barrier double diode
[1]
[1]
[2]
Min
-
-
-
-
-
-
−65
−65
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
30
200
300
600
230
125
+125
+150
30
60
110
200
BAT74
SOT143B
Version
Unit
V
mA
mA
mA
mW
°C
°C
°C
V
V
mA
mA
2 of 10

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