RB521CS30L NXP Semiconductors, RB521CS30L Datasheet - Page 5

• Manufacturer Part Number: RB521CS30L
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra smallSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
RB521CS30L
Product data sheet
Fig 3.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
−1
−2
−3
−4
1
0.0
Forward current as a function of forward
voltage; typical values
j
j
j
j
j
(1)
(2)
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.2
(3)
(4)
Table 7.
T
[1]
Symbol
V
I
C
R
amb
F
d
(5)
Pulse test: t
0.4
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
0.6
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
006aac502
V
F
(V)
0.8
Rev. 1 — 24 January 2011
V
V
Conditions
I
I
I
I
Fig 4.
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 10 V
= 1 V; f = 1 MHz
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
100 mA low V
−2
−3
−4
−5
−6
−7
−8
−9
0
Reverse current as a function of reverse
voltage; typical values
j
j
j
j
= 125 °C
= 85 °C
= 25 °C
= −40 °C
F
10
[1]
MEGA Schottky barrier rectifier
Min
-
-
-
-
-
-
(1)
(2)
(3)
(4)
RB521CS30L
Typ
145
210
280
405
2
8
20
© NXP B.V. 2011. All rights reserved.
V
R
006aac503
(V)
Max
-
-
350
-
10
-
30
mV
Unit
mV
mV
mV
μA
pF
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