RB521S30 NXP Semiconductors, RB521S30 Datasheet
RB521S30
Available stocks
Related parts for RB521S30
RB521S30 Summary of contents
Page 1
... RB521S30 200 mA low V Rev. 01 — 6 October 2009 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. ...
Page 2
... T average forward current square wave kHz T T non-repetitive peak t forward current half sine wave; JEDEC method total power dissipation T Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F Simplified outline Graphic symbol [ Marking code ZB Min = 0.5; ...
Page 3
... standard footprint Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F Min Max Unit - 150 C 55 +150 C ...
Page 4
... FR4 PCB, mounting pad for cathode 1 cm Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values RB521S30_1 Product data sheet 200 mA low Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F 006aab710 (s) p 006aab711 ...
Page 5
... 100 200 mA F reverse current diode capacitance MHz; V 300 s; 0.02. p 006aab712 0.6 0.8 1.0 V (V) F Fig 4. Rev. 01 — 6 October 2009 RB521S30 200 mA low V MEGA Schottky barrier rectifier F Min Typ [1] - 130 - 190 - 255 - 355 - 420 - 2 ...
Page 6
... RB521S30_1 Product data sheet 006aab714 P F(AV) ( (V) R Fig 6. 006aab716 I F(AV) ( (V) R Fig 8. Rev. 01 — 6 October 2009 RB521S30 200 mA low V MEGA Schottky barrier rectifier F 0.15 (3) 0.10 (2) (1) 0.05 0.0 0.0 0.1 0 150 C j (1) = 0.1 (2) = 0.2 (3) = 0.5 ( Average forward power dissipation as a function of average forward current ...
Page 7
... Fig 10. Average forward current as a function SAMPLING OSCILLOSCOPE mga881 input signal = 0.6 ns; reverse voltage pulse duration t r Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F 006aab719 (1) (2) (3) ( 100 125 150 150 ...
Page 8
... RB521S30_1 Product data sheet DC, and RMS M 0.85 0.75 1.65 1.25 1.55 1.15 0.34 0.26 Dimensions in mm Rev. 01 — 6 October 2009 RB521S30 200 mA low V MEGA Schottky barrier rectifi duty cycle = 006aaa812 Figure 8, 9 and with I defined as peak current ...
Page 9
... Packing methods SOD523 2 mm pitch tape and reel 4 mm pitch tape and reel 2.15 1.1 1 Reflow soldering is the only recommended soldering method. Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F [1] Packing quantity 3000 8000 - -315 -115 - Section 14. ...
Page 10
... Revision history Table 9. Revision history Document ID Release date RB521S30_1 20091006 RB521S30_1 Product data sheet 200 mA low V Data sheet status Change notice Product data sheet - Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F Supersedes - © NXP B.V. 2009. All rights reserved ...
Page 11
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 6 October 2009 RB521S30 MEGA Schottky barrier rectifier F © NXP B.V. 2009. All rights reserved ...
Page 12
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com RB521S30 All rights reserved. Date of release: 6 October 2009 Document identifier: RB521S30_1 ...