PMEG2005AELD NXP Semiconductors, PMEG2005AELD Datasheet - Page 6

• Manufacturer Part Number: PMEG2005AELD
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEG2005AELD
Product data sheet
Fig 5.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
–1
–2
–3
–4
1
0
Forward current as a function of forward
voltage; typical values
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
(3)
(4)
0.2
(5)
Table 7.
T
[1]
[2]
Symbol
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
0.4
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery
time
Characteristics
0.6
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
006aac560
V
F
(V)
F
0.8
= 10 mA to I
Rev. 1 — 10 May 2011
Conditions
I
I
I
I
I
V
V
V
F
F
F
F
F
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
R
= 10 V
= 20 V
= 1 V; f = 1 MHz
= 10 mA; R
Fig 6.
20 V, 0.5 A low V
(A)
I
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
R
–1
–2
–3
–4
–5
–6
–7
1
0
Reverse current as a function of reverse
voltage; typical values
L
j
j
j
j
j
= 100 Ω; measured at I
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
[1]
[2]
5
PMEG2005AELD
F
Min
-
-
-
-
-
-
-
-
-
(2)
MEGA Schottky barrier rectifier
10
(3)
(4)
(5)
R
Typ
20
65
125
210
365
300
500
19
6
= 1 mA.
15
© NXP B.V. 2011. All rights reserved.
V
Max
60
110
190
290
440
600
1500
25
-
006aac561
R
(V)
20
Unit
mV
mV
mV
mV
mV
μA
μA
pF
ns
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