PMEG2005AEV_3005_4005 NXP Semiconductors, PMEG2005AEV_3005_4005 Datasheet

Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOT666 ultra smallSMD plastic package

PMEG2005AEV_3005_4005

Manufacturer Part Number
PMEG2005AEV_3005_4005
Description
Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOT666 ultra smallSMD plastic package
Manufacturer
NXP Semiconductors
Datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
Very low V
MEGA Schottky barrier
F
rectifiers
Product data sheet
2003 Aug 20

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PMEG2005AEV_3005_4005 Summary of contents

Page 1

DATA SHEET PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low V rectifiers Product data sheet DISCRETE SEMICONDUCTORS M3D744 MEGA Schottky barrier F 2003 Aug 20 ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers FEATURES • Very low forward voltage • High surge current • Ultra small plastic SMD package. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping • Inverse polarity protection • Low power consumption applications. ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V continuous reverse voltage R PMEG2005AEV PMEG3005AEV PMEG4005AEV I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current FSM ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I continuous reverse R current C diode capacitance d Note ≤ 300 μs; δ ≤ 0.02. 1. Pulse test 2003 Aug 20 PMEG2005AEV; PMEG3005AEV; PMEG2005AEV PMEG3005AEV PMEG4005AEV CONDITIONS TYP ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 PMEG2005AEV = 150 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 150 ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers 3 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 PMEG3005AEV = 150 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.5 Forward current as a function of forward voltage; typical values. 120 handbook, halfpage ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers 3 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 PMEG4005AEV = 150 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.8 Forward current as a function of forward voltage; typical values. 100 handbook, halfpage ...

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... NXP Semiconductors Very low V MEGA F Schottky barrier rectifiers PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Aug ...

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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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