PMEG2005BELD NXP Semiconductors, PMEG2005BELD Datasheet - Page 3

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D Surface-Mounted Device (SMD) plastic package with visible and solderab

PMEG2005BELD

Manufacturer Part Number
PMEG2005BELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D Surface-Mounted Device (SMD) plastic package with visible and solderab
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
PMEG2005BELD
Manufacturer:
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Quantity:
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Part Number:
PMEG2005BELD
Quantity:
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NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
6. Thermal characteristics
Table 6.
[1]
[2]
[3]
[4]
[5]
[6]
PMEG2005BELD
Preliminary data sheet
Symbol
V
I
I
I
I
P
T
T
T
Symbol
R
R
F
F(AV)
FRM
FSM
j
amb
stg
R
tot
th(j-a)
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on a ceramic PCB, Al
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on a ceramic PCB, Al
Soldering point of cathode tab.
Limiting values
Thermal characteristics
Parameter
reverse voltage
forward current
average forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
2
2
O
O
3
3
, standard footprint.
Conditions
in free air
, standard footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2012
Conditions
T
T
square wave; δ = 0.5; f = 20 kHz;
T
square wave; δ = 0.5; f = 20 kHz;
T
t
square wave; t
T
p
j
sp
amb
sp
amb
≤ 1 ms; δ ≤ 0.25
= 25 °C
≤ 140 °C
≤ 140 °C
≤ 115 °C
≤ 25 °C
p
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
= 8 ms; T
j(init)
= 25 °C
[1][2][3]
[1][4][3]
[1][5][3]
[6]
PMEG2005BELD
2
.
[1]
[2][3]
[1][3]
[4][3]
Min
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-55
-65
Typ
-
-
-
-
© NXP B.V. 2012. All rights reserved.
150
150
Max
20
0.5
0.5
0.5
3
6
370
735
1135
150
Max
340
170
110
25
R
2
.
are a
Unit
V
A
A
A
A
A
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
K/W
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