PMEGXX05EH_EJ_SER NXP Semiconductors, PMEGXX05EH_EJ_SER Datasheet - Page 5

• Manufacturer Part Number: PMEGXX05EH_EJ_SER
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection encapsulated in small SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEGXX05EH_EJ_SER_2
Product data sheet
Table 8.
T
[1]
[2]
Symbol
V
I
C
R
amb
F
d
Pulse test: t
Schottky barrier rectifier thermal run-away has to be considered, as in some applications the reverse power
losses P
losses P
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance V
Characteristics
R
R
are a significant part of the total power losses. Nomograms for determining the reverse power
and I
PMEG2005EH,
PMEG2005EJ
PMEG3005EH,
PMEG3005EJ
PMEG4005EH,
PMEG4005EJ
PMEG2005EH,
PMEG2005EJ
PMEG3005EH,
PMEG3005EJ
PMEG4005EH,
PMEG4005EJ
PMEG2005EH,
PMEG2005EJ
PMEG3005EH,
PMEG3005EJ
PMEG4005EH,
PMEG4005EJ
p
≤ 300 μs; δ ≤ 0.02.
F(AV)
rating will be available on request.
Rev. 02 — 13 January 2010
Conditions
R
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
= 1 V; f = 1 MHz
R
R
R
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 10 V
= 20 V
= 10 V
= 30 V
= 10 V
= 40 V
0.5 A very low V
PMEGxx05EH/EJ series
[1][2]
[1]
F
MEGA Schottky barrier rectifiers
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
90
150
210
280
355
90
150
215
285
380
95
155
220
295
420
15
40
12
40
7
30
66
55
43
© NXP B.V. 2010. All rights reserved.
Max
130
240
330
390
130
250
340
430
130
270
350
470
40
200
30
150
20
100
80
70
50
190
200
210
Unit
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
μA
μA
μA
μA
μA
μA
pF
pF
pF
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