PMEGXX05ET_SER NXP Semiconductors, PMEGXX05ET_SER Datasheet - Page 6

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface Mounted Device (SMD) plastic package

PMEGXX05ET_SER

Manufacturer Part Number
PMEGXX05ET_SER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEGXX05ET_SER_2
Product data sheet
Fig 4.
Fig 6.
(mA)
I
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
10
10
10
1
4
3
2
0
forward voltage; typical values
T
PMEG3005ET: Forward current as a function of
PMEG3005ET: Diode capacitance as a function of reverse voltage; typical values
(1)
amb
amb
amb
amb
amb
amb
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
= 25 °C; f = 1 MHz
(2)
(3)
0.2
(4)
(5)
0.4
(pF)
C
120
d
80
40
0.6
0
0
0.5 A very low V
006aaa519
V
F
(V)
Rev. 02 — 13 January 2010
0.8
10
F
MEGA Schottky barrier rectifiers in SOT23 package
Fig 5.
(μA)
I
R
20
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
10
−1
−2
−3
1
5
4
3
2
0
PMEG3005ET: Reverse current as a function of
reverse voltage; typical values
V
amb
amb
amb
amb
amb
R
006aaa252
(V)
PMEGxx05ET series
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
5
30
10
15
20
© NXP B.V. 2010. All rights reserved.
(1)
(2)
(3)
(4)
(5)
25
006aaa520
V
R
(V)
30
6 of 12

Related parts for PMEGXX05ET_SER