1N4148_1N4448 NXP Semiconductors, 1N4148_1N4448 Datasheet - Page 3

• Manufacturer Part Number: 1N4148_1N4448
• Description: The 1N4148 and 1N4448 are high-speed switching diodesfabricated in planar technology, and encapsulated inhermetically sealed leaded glass SOD27 (DO-35)packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
2004 Aug 10
V
V
I
I
I
P
T
T
V
I
I
C
t
V
R
R
SYMBOL
SYMBOL
SYMBOL
j
F
FRM
FSM
R
R
rr
stg
j
RRM
R
tot
= 25 °C unless otherwise specified.
F
fr
High-speed diodes
d
th(j-tp)
th(j-a)
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
forward voltage
reverse current
reverse current; 1N4448
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
1N4148
1N4448
PARAMETER
PARAMETER
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
see Fig.3
V
V
V
f = 1 MHz; V
when switched from I
I
measured at I
when switched from I
t
amb
R
r
t = 1 µs
t = 1 ms
t = 1 s
R
R
R
= 20 ns; see Fig.8
I
I
I
= 60 mA; R
F
F
F
= 20 V; see Fig.5
= 20 V; T
= 20 V; T
= 25 °C; note 1
= 10 mA
= 5 mA
= 100 mA
lead length 10 mm
lead length 10 mm; note 1
3
CONDITIONS
CONDITIONS
j
j
R
= 150 °C; see Fig.5
= 100 °C; see Fig.5
L
R
j
= 0 V; see Fig.6
= 25 °C prior to
= 100 Ω;
= 1 mA; see Fig.7
CONDITIONS
F
F
= 10 mA to
= 50 mA;
−
−
−
−
−
−
−
−
−65
−
−
0.62
−
−
−
−
−
−
MIN.
MIN.
1N4148; 1N4448
100
100
200
450
4
1
0.5
500
+200
200
1
0.72
1
25
50
3
4
4
2.5
240
350
VALUE
Product data sheet
MAX.
MAX.
V
V
mA
mA
A
A
A
mW
°C
°C
V
V
V
nA
µA
µA
pF
ns
V
K/W
K/W
UNIT
UNIT
UNIT