PESD24VS1UA NXP Semiconductors, PESD24VS1UA Datasheet - Page 4

• Manufacturer Part Number: PESD24VS1UA
• Description: Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD323 (SC-76) verysmall Surface-Mounted Device (SMD) plastic package designed to protect one signal linefrom the damage caused by ESD and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
PESD24VS1UA
Product data sheet
Fig 3.
P
(W)
pp
10
10
10
10
4
3
2
1
T
Peak pulse power dissipation as a function of
pulse time; typical values
amb
= 25 °C
10
Table 8.
T
[1]
[2]
[3]
Symbol
V
I
V
C
V
r
RM
dyn
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
ANS/IESD STM5-1-2008.
10
= 25
2
°
C unless otherwise specified.
Parameter
reverse standoff
voltage
reverse leakage
current
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
Characteristics
10
3
All information provided in this document is subject to legal disclaimers.
006aac519
t
p
(μs)
10
Rev. 1 — 7 March 2011
4
Conditions
V
I
f = 1 MHz; V
I
I
I
R
PP
PP
R
RWM
= 5 mA
= 10 A
= 1 A
= 3 A
Fig 4.
P
= 24 V
PP(25°C)
P
PP
1.2
0.8
0.4
0
R
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
= 0 V
Unidirectional ESD protection diode
50
p
[1][2]
[2][3]
= 100 ns; square pulse;
PESD24VS1UA
Min
-
-
26.5
-
-
-
-
100
Typ
-
< 1
27.0
23
-
-
1.53
150
© NXP B.V. 2011. All rights reserved.
001aaa193
T
j
Max
24
50
27.5
50
36
70
-
(°C)
200
V
Unit
V
nA
pF
V
V
Ω
4 of 13