BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7109-75ATE

Manufacturer Part Number
BUK7109-75ATE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7109-75ATE
Manufacturer:
NXP
Quantity:
12 000
Part Number:
BUK7109-75ATE
Manufacturer:
NXP
Quantity:
30 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
Table 1.
Symbol Parameter
V
Static characteristics
R
S
V
DS
F(TSD)
F(TSD)
DSon
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Electrical Power Assisted Steering
(EPAS)
BUK7109-75ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
drain-source voltage T
drain-source
on-state resistance
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
Quick reference
Conditions
V
T
see
I
T
I
F
F
j
j
j
GS
≥ 25 °C; T
= 25 °C; see
= 250 µA; T
≤ 175 °C
= 250 µA; T
Figure 8
= 10 V; I
j
D
≤ 175 °C
j
j
= 50 A;
≥ -55 °C;
= 25 °C
Figure
7;
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Variable Valve Timing for engines
Min
-
-
-1.4
648
Product data sheet
Typ
-
8
-1.54
658
Max
75
9
-1.68
668
Unit
V
mΩ
mV/K
mV

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BUK7109-75ATE Summary of contents

Page 1

... BUK7109-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... BUK7109-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 10 February 2009 BUK7109-75ATE Graphic symbol mbl317 Version SOT426 © NXP B.V. 2009. All rights reserved ...

Page 3

... °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 10 February 2009 BUK7109-75ATE Min Max - - [1] - 120 [ [ Figure 3 - 480 ...

Page 4

... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature 100 μ Rev. 02 — 10 February 2009 BUK7109-75ATE 03ni95 50 100 150 200 T mb (°C) 03ni96 μ 100 (V) © NXP B.V. 2009. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7109-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions minimum footprint; mounted on a printed-circuit board see Figure Rev. 02 — 10 February 2009 BUK7109-75ATE Min Typ Max Unit - 0.55 K/W ...

Page 6

... ° °C; see Figure MHz °C; see Figure 12 j Rev. 02 — 10 February 2009 BUK7109-75ATE Min Typ Max Unit 4 ...

Page 7

... ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 10 February 2009 BUK7109-75ATE Min Typ Max Unit - 108 - ns - 185 - ns - 100 - ...

Page 8

... −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 10 February 2009 BUK7109-75ATE N-channel TrenchPLUS standard level FET 03ni82 (V) 03nb25 0 60 120 T (°C) j © NXP B.V. 2009. All rights reserved. 20 ...

Page 9

... C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75ATE 03aa35 min typ max (V) GS 03ni97 C iss C rss C oss ...

Page 10

... S F (mV/K) −1.60 −1.50 −1.40 150 200 645 T (°C) j Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75ATE 03ni92 100 150 Q G (nC) 03ne85 max typ min 655 665 675 V (mV) F © ...

Page 11

... Fig 17. Reverse diode current as a function of reverse diode voltage; typical values BUK7109-75ATE_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.4 0.8 1 (V) Rev. 02 — 10 February 2009 BUK7109-75ATE 03ni85 1.6 © NXP B.V. 2009. All rights reserved ...

Page 12

... max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 10 February 2009 BUK7109-75ATE N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. SOT426 ...

Page 13

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7109-75ATE separated from data sheet BUK71_7909_75ATE-01. BUK71_7909_75ATE-01 20020812 (9397 750 09878) BUK7109-75ATE_2 ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 10 February 2009 BUK7109-75ATE © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2009 Document identifier: BUK7109-75ATE_2 All rights reserved. ...

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