BUK7508-40B NXP Semiconductors, BUK7508-40B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7508-40B

Manufacturer Part Number
BUK7508-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7508-40B
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Part Number:
BUK7508-40B
Manufacturer:
NXP
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK7508-40B
N-channel TrenchMOS standard level FET
Rev. 05 — 24 March 2011
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
6.6
Max Unit
40
75
157
8
V
A
W
mΩ

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BUK7508-40B Summary of contents

Page 1

... BUK7508-40B N-channel TrenchMOS standard level FET Rev. 05 — 24 March 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 13 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET Min ≤ sup = ° ...

Page 3

... ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B Min Max - -20 20 [1] Figure 1; - 101 [1] Figure [2] Figure 1 ...

Page 4

... Normalized total power dissipation as a function of solder point temperature Limit DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET 003aac070 50 100 150 T mb 003aac079 = 10 μ 100 μs ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7508-40B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 vertical in still air −4 − All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B Min Typ Max - - 0. 003aac080 t δ ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B Min Typ Max Unit 4 ...

Page 7

... DS Fig 6. 003aac077 V ( 200 300 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET ( Forward transconductance as a function of drain current; typical values 100 I ...

Page 8

... T (°C) j Fig 10. Sub-threshold drain current as a function of 003aac075 (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET − (A) min typ −2 10 −3 10 −4 10 − ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 003aac071 25 ° ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B Supersedes BUK7508-40B v.4 BUK7508-40B v.3 © NXP B.V. 2011. All rights reserved ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 March 2011 BUK7508-40B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 24 March 2011 Document identifier: BUK7508-40B ...

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