BUK7613-75B NXP Semiconductors, BUK7613-75B Datasheet - Page 8

• Manufacturer Part Number: BUK7613-75B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7613-75B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
100
S
75
50
25
30
0
V
0.0
DD
All information provided in this document is subject to legal disclaimers.
Q
= 60 V
G
03nm74
(nC)
Rev. 3 — 27 December 2011
T
40
j
= 175 ° C
0.5
Fig 14. Input, output and reverse transfer capacitances
T
(pF)
j
1.0
C
= 25 °C
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
V
−2
SD
N-channel TrenchMOS standard level FET
03nm73
(V)
1.5
10
−1
C
C
C
rss
iss
oss
BUK7613-75B
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nm80
(V)
10
2
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