BUK7635-100A NXP Semiconductors, BUK7635-100A Datasheet - Page 6

• Manufacturer Part Number: BUK7635-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7635-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
140
120
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
4
min
V
GS
typ
6
(V) = 10
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
(V)
DS
03nd33
03aa35
20
(V)
Rev. 02 — 18 February 2011
10
6
9
8
7.5
6.5
5.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
35
30
25
20
35
30
25
20
15
10
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK7635-100A
15
40
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(A)
(V)
03nd32
03nd30
20
60
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