BUK98180-100A NXP Semiconductors, BUK98180-100A Datasheet
BUK98180-100A
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BUK98180-100A Summary of contents
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... BUK98180-100A N-channel TrenchMOS logic level FET Rev. 03 — 3 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT223 (SC-73) Description plastic surface-mounted package with increased heatsink; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT223 © NXP B.V. 2010. All rights reserved. ...
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... P der (%) 150 200 0 T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET Min Typ Max - - 100 - - 100 - 4.6 - ...
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... Conditions see Figure 4 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET 03nc34 = 10 μ 100 μ 100 (V) DS ...
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... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1 2.3 0 ...
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... DS Fig 6. 03aa36 g (S) max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET 180 175 170 165 160 155 150 145 Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET gate charge; typical values ...
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... Fig 14. Input, output and reverse transfer capacitances ( 150 ° 0.0 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nc26 = 25 ° ...
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... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 X v ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK98180-100A v.3 20100603 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 June 2010 BUK98180-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 June 2010 Document identifier: BUK98180-100A ...