BSN20 NXP Semiconductors, BSN20 Datasheet - Page 6

• Manufacturer Part Number: BSN20
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07213
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
(A)
I D
( )
10
9
8
7
6
5
4
3
2
1
0
0
3.5V
0.1
4 V
0.2
4.5 V
0.3
0.4
0.5
V GS = 10V
T j = 25 o C
I D (A)
0.6
03aa52
03aa51
0.7
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
=
= 25 C and 150 C; V
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
(A)
I D
a
DSon 25 C
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
R
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2
1
0
DSon
-60
0
0
V DS > I D X R DSon
1
-20
2
20
3
T j = 25 o C
DS
T j (
4
60
o
I
C)
D
5
© Philips Electronics N.V. 2000. All rights reserved.
R
6
100
DSon
7
150 o C
140
8
V GS (V)
03aa53
03aa28
BSN20
9
180
10
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