BSP225 NXP Semiconductors, BSP225 Datasheet - Page 2

• Manufacturer Part Number: BSP225
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope,
intended for use in relay, high-speed
and line transformer drivers.
PINNING - SOT223
April 1995
Low R
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
P-channel enhancement mode vertical
D-MOS transistor
PIN
1
2
3
4
DS(on)
gate
drain
source
drain
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
R
SYMBOL
V
I
V
DS(on)
D
DS
GS(th)
handbook, halfpage
drain-source voltage
drain current
drain-source on-resistance
gate-source threshold voltage
2
Top view
Fig.1 Simplified outline and symbol.
PARAMETER
1
2
4
3
MAM121
g
DC value
V
CONDITIONS
I
V
I
GS
D
D
GS
= 200 mA
= 1 mA
= V
= 10 V
DS
d
s
Product specification
250
225
15
2.8
BSP225
MAX.
V
mA
V
UNIT