BSS192 NXP Semiconductors, BSS192 Datasheet

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSS192

Manufacturer Part Number
BSS192
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 1997 Jun 20
book, halfpage
DATA SHEET
BSS192
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D109
2002 May 22

Related parts for BSS192

BSS192 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 M3D109 2002 May 22 ...

Page 2

... SYMBOL handbook, halfpage Bottom view Marking code: KB. Fig.1 Simplified outline and symbol. CONDITIONS mA 200 mA Product specification BSS192 DESCRIPTION source drain gate MAM354 MAX. UNIT 240 V 2.8 V 200 mA 12 ...

Page 3

... MHz 250 250 Product specification BSS192 MIN. MAX. UNIT 240 200 mA 600 +150 C 150 C VALUE UNIT 125 K/W MIN. TYP. MAX. UNIT ...

Page 4

... V GS (1) C (2) C (3) C Fig.5 4 Product specification Fig.3 Input and output waveforms. 80 (1) 40 (2) ( MHz iss . oss . rss Capacitance as a function of drain-source voltage; typical values. BSS192 off MBB690 MDA180 (V) ...

Page 5

... Fig.7 Transfer characteristic; typical values. 1.2 k 1.1 1 0.9 0.8 0 GSth ------------------------------------- - GSth mA. GSth D Fig.9 Temperature coefficient of gate-source threshold voltage; typical values. Product specification BSS192 MDA178 (V) MDA182 100 150 ...

Page 6

... P-channel enhancement mode vertical D-MOS transistor 2.5 handbook, halfpage k 2 1 DSon ---------------------------------------- - DSon I = 200 mA Fig.10 Temperature coefficient of drain-source on-state resistance; typical values. 2002 May 22 MDA181 100 150 Product specification BSS192 ...

Page 7

... OUTLINE VERSION IEC SOT89 2002 May scale 0.44 4.6 2.6 4.25 3.0 1.5 0.37 4.4 2.4 3.75 REFERENCES JEDEC EIAJ TO-243 SC-62 7 Product specification min. 0.8 0.13 EUROPEAN PROJECTION BSS192 SOT89 ISSUE DATE 97-02-28 99-09-13 ...

Page 8

... Product specification BSS192 DEFINITIONS These products are not Philips Semiconductors ...

Page 9

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 9 Product specification BSS192 ...

Page 10

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 10 Product specification BSS192 ...

Page 11

... Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 11 Product specification BSS192 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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