PH3120L NXP Semiconductors, PH3120L Datasheet
PH3120L
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PH3120L Summary of contents
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... PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° ° 46 j(init Ω unclamped 0.32 ms Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT669 Min Max - 20 - 100 - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature / Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET 03aa15 50 100 150 200 T (°C) mb 003aaa360 = 10 μ 100 μ 100 ms 2 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH3120L_3 Product data sheet N-channel TrenchMOS logic level FET Conditions see Figure Rev. 03 — 30 March 2009 PH3120L Min Typ Max Unit - - 2 K/W 003aaa361 δ ...
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... A G(ext ° see Figure /dt = -100 A/µ ° Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET Min Typ Max 0. 1 500 - 0. 100 - 2 100 - 2 ...
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... Fig 8. Sub-threshold drain current as a function of gate-source voltage Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET 003aaa363 = 150 ° ° (V) GS 03aa36 min typ max ...
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... C (pF 100 10 Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET 03aa27 0 60 120 ( ° 003aaa365 C iss C oss C rss - ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PH3120L_3 Product data sheet (A) 30 150 ° ° 0.2 0.4 0.6 0.8 Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET 003aaa366 1 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... D 1 (1) ( max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...
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... PH3120L_3 20090330 • Modifications: • PH3120L_2 (9397 750 14089) 20050120 PH3120L-01 (9397 750 12812) 20040304 PH3120L_3 Product data sheet Data sheet status Product data sheet The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 30 March 2009 PH3120L N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PH3120L All rights reserved. Date of release: 30 March 2009 Document identifier: PH3120L_3 ...