PMK50XP NXP Semiconductors, PMK50XP Datasheet
PMK50XP
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PMK50XP Summary of contents
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... PMK50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 28 April 2010 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... P-channel TrenchMOS extremely low level FET Simplified outline SOT96-1 (SO8) Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP Graphic symbol 003aaa671 Version SOT96-1 © NXP B.V. 2010. All rights reserved ...
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... Figure °C sp ≤ 10 µs; pulsed ° 003aab642 120 P der (%) 150 200 T (°C) sp Fig 2. function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP Min Typ - - - - - - 100 ...
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... P-channel TrenchMOS extremely low level FET = −V / −I Limit R DSon −1 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP 003aab643 10 μ 100 μ 100 ms −10 V (V) DS Min Typ Max - ...
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... MHz °C; see Figure Ω - -4 Ω R G(ext -1 ° see Figure 14 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP Min Typ Max - - -1.1 -0. -0.55 -0.75 -0. -10 -100 ...
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... DS Fig 6. 03ar95 ( 120 180 T (°C) j Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP −20 −15 −10 −5 25 °C = 150 ° −1 − > DSon Transfer characteristics: drain current as a function of gate-source voltage ...
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... R DSon (mΩ) 120 180 ( ° Fig 10. Drain-source on-state resistance as a function 03aq09 (nC) G Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP V (V) = -1.9 -2.1 GS -2 -10 - ° drain current; typical values ...
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... P-channel TrenchMOS extremely low level FET 03aq08 -I (A) C iss C oss C rss (V) DS Fig 14. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP 150 ° ° 0 voltage; typical values 003aab278 1 ...
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... P-channel TrenchMOS extremely low level FET θ detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION PMK50XP SOT96 (1) θ 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02-18 © NXP B.V. 2010. All rights reserved ...
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... Product data sheet P-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP Supersedes PMK50XP_1 - © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 PMK50XP Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMK50XP All rights reserved. Date of release: 28 April 2010 Document identifier: PMK50XP ...