PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 5

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMN35EN
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
T
V
T
V
T
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 25 °C
= 25 °C
= 25 °C; I
= 1.3 A; V
= 250 µA; V
= 250 µA; V
= 30 V; V
= 30 V; V
= 10 V; I
= 15 V; I
= 15 V; f = 1 MHz; V
= 15 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 4.5 V; I
Rev. 1 — 20 July 2011
D
GS
D
D
D
D
D
GS
GS
GS
= 5.1 A
DS
GS
DS
DS
= 5.1 A; T
= 5.1 A; V
= 5.1 A; T
= 5.1 A; T
= 4.3 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 10 V; R
= V
= 0 V; T
= 0 V; T
GS
; T
j
= 25 °C
j
j
j
j
j
j
GS
GS
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 150 °C
= 25 °C
j
G(ext)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 10 V;
= 0 V;
= 6 Ω;
30 V, 5.1 A N-channel Trench MOSFET
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
1.5
-
-
-
-
25
39
32
14
6.2
0.9
1
334
81
40
4
15
53
24
0.75
PMN35EN
© NXP B.V. 2011. All rights reserved.
-
Max
-
2.5
1
10
100
100
31
48
43
-
9.3
-
-
-
-
-
-
-
-
1.2
Unit
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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